nov-14-2002 1 bb644 /bb664... silicon variable capacitance diodes for vhf tv-tuners high capacitance ratio low series inductance low series resistance excellent uniformity and matching due to "in-line" matching assembly procedure bb644 bb664/-02v type package configuration l s (nh) marking bb644 bb664 BB664-02V sod323 scd80 sc79 single single single 1.8 0.6 0.6 yellow 4 44 4 maximum ratings at t a = 25c, unless otherwise specified parameter symbol value unit diode reverse voltage v r 30 v peak reverse voltage r 5k v rm 35 forward current i f 20 ma operating temperature range t op -55 ... 150 c storage temperature t stg -55 ... 150
nov-14-2002 2 bb644 /bb664... electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics reverse current v r = 30 v v r = 30 v, t a = 85 c i r - - - - 10 100 na ac characteristics diode capacitance v r = 1 v, f = 1 mhz v r = 2 v, f = 1 mhz v r = 25 v, f = 1 mhz v r = 28 v, f = 1 mhz c t 39 29.4 2.5 2.4 41.8 31.85 2.7 2.55 44.5 34.2 2.85 2.75 pf capacitance ratio v r = 1 v, v r = 28 v, f = 1 mhz c t1 / c t28 15 16.4 17.8 capacitance ratio v r = 1 v, v r = 25 v, f = 1 mhz c t2 / c t25 11 11.8 12.6 capacitance matching 1) v r = 1 v, v r = 28 v, f = 1 mhz c t / c t - - 2 % series resistance v r = 5 v, f = 470 mhz r s - 0.6 0.75 1 for details please refer to application note 047.
nov-14-2002 3 bb644 /bb664... diode capacitance c t = (v r ) f = 1mhz 0 5 10 15 20 25 v 35 v r 0 5 10 15 20 25 30 35 40 45 50 55 60 pf 70 c t temperature coefficient of the diode capacitance t cc = ( v r ) 10 0 10 1 10 2 v v r -5 10 -4 10 -3 10 1/c tc c reverse current i r = ( v r ) t a = parameter 0 4 8 12 16 20 24 v 30 v r -11 10 -10 10 -9 10 a i r 25c 85c
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